Мақаланы E-mail арқылы жіберу Investigation of spectral dependences of the absorption coefficient in InGaAs layers
- Авторлар: Iakovleva N.1, Nikonov A.1,2
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Мекемелер:
- Orion Research and Production Association
- Moscow Institute of Physics and Technology (State University)
- Шығарылым: Том 62, № 3 (2017)
- Беттер: 331-335
- Бөлім: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/198184
- DOI: https://doi.org/10.1134/S1064226917030226
- ID: 198184
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Аннотация
Values of the absorption coefficient of InGaAs structures grown by means of gaseous-phase epitaxy from metaloranic compounds have been studied and calculated. Experimental data have been compared to the theoretical model of the absorption spectrum based on the phenomenon of fundamental absorption and the general theory of direct interband optical transitions. The energy gap width has been graphically calculated from the slope of the experimental absorption characteristic.
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Авторлар туралы
N. Iakovleva
Orion Research and Production Association
Хат алмасуға жауапты Автор.
Email: niyakovleva@mail.ru
Ресей, Moscow, 111535
A. Nikonov
Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)
Email: niyakovleva@mail.ru
Ресей, Moscow, 111535; Dolgoprudnyi, Moscow oblast, 141700
