Investigation of spectral dependences of the absorption coefficient in InGaAs layers
- 作者: Iakovleva N.1, Nikonov A.1,2
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隶属关系:
- Orion Research and Production Association
- Moscow Institute of Physics and Technology (State University)
- 期: 卷 62, 编号 3 (2017)
- 页面: 331-335
- 栏目: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/198184
- DOI: https://doi.org/10.1134/S1064226917030226
- ID: 198184
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详细
Values of the absorption coefficient of InGaAs structures grown by means of gaseous-phase epitaxy from metaloranic compounds have been studied and calculated. Experimental data have been compared to the theoretical model of the absorption spectrum based on the phenomenon of fundamental absorption and the general theory of direct interband optical transitions. The energy gap width has been graphically calculated from the slope of the experimental absorption characteristic.
作者简介
N. Iakovleva
Orion Research and Production Association
编辑信件的主要联系方式.
Email: niyakovleva@mail.ru
俄罗斯联邦, Moscow, 111535
A. Nikonov
Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)
Email: niyakovleva@mail.ru
俄罗斯联邦, Moscow, 111535; Dolgoprudnyi, Moscow oblast, 141700