Influence of parameters of the semiconductor–dielectric interface on the current of the guard ring of silicon photodiodes
- Авторлар: Demidov S.1, Klimanov E.1
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Мекемелер:
- OAO NPO Orion
- Шығарылым: Том 61, № 3 (2016)
- Беттер: 328-332
- Бөлім: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196842
- DOI: https://doi.org/10.1134/S1064226916030074
- ID: 196842
Дәйексөз келтіру
Аннотация
Relationships, which determine requirements for the resistance of the inversion layer for decreasing the influence of the guard ring on the dark current and photodiode noisess and allow obtaining the specified intercoupling coefficient between photosensitive elements in multielement photodiodes, are given. It is shown that dependences of the current of the guard ring on the bias voltage and the charge on the Si–SiO2 interface in the presence of the inversion layer satisfy the current generation model in the space-charge region of the current. The resistance of the inversion layer increase with an increase in the bias voltage in accordance with the relationship Ru ∼ V1.5.
Негізгі сөздер
Авторлар туралы
S. Demidov
OAO NPO Orion
Хат алмасуға жауапты Автор.
Email: orion@orion-ir.ru
Ресей, Kosinskaya ul. 9, Moscow, 111538
E. Klimanov
OAO NPO Orion
Email: orion@orion-ir.ru
Ресей, Kosinskaya ul. 9, Moscow, 111538