Influence of parameters of the semiconductor–dielectric interface on the current of the guard ring of silicon photodiodes

Abstract

Relationships, which determine requirements for the resistance of the inversion layer for decreasing the influence of the guard ring on the dark current and photodiode noisess and allow obtaining the specified intercoupling coefficient between photosensitive elements in multielement photodiodes, are given. It is shown that dependences of the current of the guard ring on the bias voltage and the charge on the Si–SiO₂ interface in the presence of the inversion layer satisfy the current generation model in the space-charge region of the current. The resistance of the inversion layer increase with an increase in the bias voltage in accordance with the relationship R_u ∼ V^1.5.