Автор туралы ақпарат

Dvoretsky, S. A.

Шығарылым	Бөлім	Атауы	Файл
Том 63, № 3 (2018)	Articles from the Russian Journal Prikladnaya Fizika	Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg_{1 – x}Cd_xTe (x = 0.22–0.23) with the Al₂O₃ Insulator
Том 64, № 3 (2019)	Article	Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy
Том 64, № 9 (2019)	Article	A Megapixel Matrix Photodetector of the Middle Infrared Range
Том 64, № 9 (2019)	Article	Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns