Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator
- Авторлар: Voitsekhovskii A.1, Nesmelov S.1, Dzyadukh S.1, Vasil’ev V.2, Varavin V.2, Dvoretsky S.1,2, Mikhailov N.2, Yakushev M.2, Sidorov G.2
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Мекемелер:
- National Research Tomsk State University
- Institute of Semiconductor Physics, Siberian Branch
- Шығарылым: Том 63, № 3 (2018)
- Беттер: 281-284
- Бөлім: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199580
- DOI: https://doi.org/10.1134/S106422691803021X
- ID: 199580
Дәйексөз келтіру
Аннотация
The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 insulating coating has been experimentally studied. It has been shown that the structures with a gradedgap layer are characterized by a deeper and wider capacitance dip in the low-frequency capacitance–voltage (CV) characteristic and by higher values of the differential resistance of the space-charge region than the structures without such a layer. It has been found that the main features of the hysteresis of capacitance dependences typical of the graded-gap structures with SiO2/Si3N4 are also characteristic of the MIS structures with the Al2O3 insulator. The factors that cause an increase in the CV characteristic hysteresis upon formation of the graded-gap layer in structures with SiO2/Si3N4 or Al2O3 are still debatable, although it may be assumed that oxygen plays a certain role in formation of this hysteresis.
Негізгі сөздер
Авторлар туралы
A. Voitsekhovskii
National Research Tomsk State University
Хат алмасуға жауапты Автор.
Email: vav43@mail.tsu.ru
Ресей, Tomsk, 634050
S. Nesmelov
National Research Tomsk State University
Email: vav43@mail.tsu.ru
Ресей, Tomsk, 634050
S. Dzyadukh
National Research Tomsk State University
Email: vav43@mail.tsu.ru
Ресей, Tomsk, 634050
V. Vasil’ev
Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Ресей, Novosibirsk, 630090
V. Varavin
Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Ресей, Novosibirsk, 630090
S. Dvoretsky
National Research Tomsk State University; Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Ресей, Tomsk, 634050; Novosibirsk, 630090
N. Mikhailov
Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Ресей, Novosibirsk, 630090
M. Yakushev
Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Ресей, Novosibirsk, 630090
G. Sidorov
Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Ресей, Novosibirsk, 630090