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Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Vasil’ev V.V., Varavin V.S., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V., Sidorov G.Y.
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