Solid-state photoelectronics of the ultraviolet range (Review)


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详细

The state-of-the-art of the development of photodetectors and photoreceiving devices operating in the range of electromagnetic radiation 0.1–0.38 μm is presented. A review of the world achievements and tendencies in the development of this field of photoelectronics based on various semiconducting materials is presented. Main physical and engineering problems of the development of ultraviolet photodetector modules designed on the basis of the АIII-N compounds are considered.

作者简介

K. Boltar

Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)

编辑信件的主要联系方式.
Email: orion@orion-ir.ru
俄罗斯联邦, ul. Kosinskaya 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700

I. Burlakov

Orion Research and Production Association; Moscow Institute of Radio Engineering and Automation

Email: orion@orion-ir.ru
俄罗斯联邦, ul. Kosinskaya 9, Moscow, 111538; pr. Vernadskogo 78, Moscow, 119454

V. Ponomarenko

Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)

Email: orion@orion-ir.ru
俄罗斯联邦, ul. Kosinskaya 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700

A. Filachev

Orion Research and Production Association

Email: orion@orion-ir.ru
俄罗斯联邦, ul. Kosinskaya 9, Moscow, 111538

V. Salo

Orion Research and Production Association

Email: orion@orion-ir.ru
俄罗斯联邦, ul. Kosinskaya 9, Moscow, 111538


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