Email this article An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions
- Authors: Ivanov-Omskii V.I.1, Mynbaev K.D.1, Trapeznikova I.N.1, Andryushchenko D.A.2, Bazhenov N.L.1, Mikhailov N.N.3, Varavin V.S.3, Remesnik V.G.3, Dvoretskii S.A.3, Yakushev M.V.3
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Affiliations:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 45, No 6 (2019)
- Pages: 553-556
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208329
- DOI: https://doi.org/10.1134/S1063785019060099
- ID: 208329
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Abstract
The disordering in cadmium mercury telluride solid solution films grown by molecular beam epitaxy on Si and GaAs substrates has been examined by optical transmission and photoluminescence investigations. The effect of a fundamental decrease in the disordering scale under thermal annealing and possible interplay of the observed phenomena with defects typical of films grown by molecular beam epitaxy are discussed.
About the authors
V. I. Ivanov-Omskii
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
K. D. Mynbaev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Author for correspondence.
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. N. Trapeznikova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. A. Andryushchenko
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
N. L. Bazhenov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090
V. S. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090
V. G. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090
S. A. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090
M. V. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090
