An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions
- Авторы: Ivanov-Omskii V.1, Mynbaev K.1, Trapeznikova I.1, Andryushchenko D.2, Bazhenov N.1, Mikhailov N.3, Varavin V.3, Remesnik V.3, Dvoretskii S.3, Yakushev M.3
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Учреждения:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Выпуск: Том 45, № 6 (2019)
- Страницы: 553-556
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208329
- DOI: https://doi.org/10.1134/S1063785019060099
- ID: 208329
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Аннотация
The disordering in cadmium mercury telluride solid solution films grown by molecular beam epitaxy on Si and GaAs substrates has been examined by optical transmission and photoluminescence investigations. The effect of a fundamental decrease in the disordering scale under thermal annealing and possible interplay of the observed phenomena with defects typical of films grown by molecular beam epitaxy are discussed.
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Об авторах
V. Ivanov-Omskii
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Россия, St. Petersburg, 194021
K. Mynbaev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: mynkad@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Trapeznikova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Россия, St. Petersburg, 194021
D. Andryushchenko
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: mynkad@mail.ioffe.ru
Россия, St. Petersburg, 197101
N. Bazhenov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Россия, Novosibirsk, 630090
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Россия, Novosibirsk, 630090
V. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Россия, Novosibirsk, 630090
S. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Россия, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Россия, Novosibirsk, 630090