An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions
- Авторлар: Ivanov-Omskii V.1, Mynbaev K.1, Trapeznikova I.1, Andryushchenko D.2, Bazhenov N.1, Mikhailov N.3, Varavin V.3, Remesnik V.3, Dvoretskii S.3, Yakushev M.3
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Мекемелер:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Шығарылым: Том 45, № 6 (2019)
- Беттер: 553-556
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208329
- DOI: https://doi.org/10.1134/S1063785019060099
- ID: 208329
Дәйексөз келтіру
Аннотация
The disordering in cadmium mercury telluride solid solution films grown by molecular beam epitaxy on Si and GaAs substrates has been examined by optical transmission and photoluminescence investigations. The effect of a fundamental decrease in the disordering scale under thermal annealing and possible interplay of the observed phenomena with defects typical of films grown by molecular beam epitaxy are discussed.
Негізгі сөздер
Авторлар туралы
V. Ivanov-Omskii
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Ресей, St. Petersburg, 194021
K. Mynbaev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: mynkad@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Trapeznikova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Ресей, St. Petersburg, 194021
D. Andryushchenko
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: mynkad@mail.ioffe.ru
Ресей, St. Petersburg, 197101
N. Bazhenov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Ресей, Novosibirsk, 630090
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Ресей, Novosibirsk, 630090
V. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Ресей, Novosibirsk, 630090
S. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Ресей, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Ресей, Novosibirsk, 630090