An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions
- Autores: Ivanov-Omskii V.1, Mynbaev K.1, Trapeznikova I.1, Andryushchenko D.2, Bazhenov N.1, Mikhailov N.3, Varavin V.3, Remesnik V.3, Dvoretskii S.3, Yakushev M.3
-
Afiliações:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Edição: Volume 45, Nº 6 (2019)
- Páginas: 553-556
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208329
- DOI: https://doi.org/10.1134/S1063785019060099
- ID: 208329
Citar
Resumo
The disordering in cadmium mercury telluride solid solution films grown by molecular beam epitaxy on Si and GaAs substrates has been examined by optical transmission and photoluminescence investigations. The effect of a fundamental decrease in the disordering scale under thermal annealing and possible interplay of the observed phenomena with defects typical of films grown by molecular beam epitaxy are discussed.
Palavras-chave
Sobre autores
V. Ivanov-Omskii
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Rússia, St. Petersburg, 194021
K. Mynbaev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Autor responsável pela correspondência
Email: mynkad@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Trapeznikova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Rússia, St. Petersburg, 194021
D. Andryushchenko
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: mynkad@mail.ioffe.ru
Rússia, St. Petersburg, 197101
N. Bazhenov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Rússia, Novosibirsk, 630090
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Rússia, Novosibirsk, 630090
V. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Rússia, Novosibirsk, 630090
S. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Rússia, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
Rússia, Novosibirsk, 630090