An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions
- 作者: Ivanov-Omskii V.1, Mynbaev K.1, Trapeznikova I.1, Andryushchenko D.2, Bazhenov N.1, Mikhailov N.3, Varavin V.3, Remesnik V.3, Dvoretskii S.3, Yakushev M.3
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隶属关系:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- 期: 卷 45, 编号 6 (2019)
- 页面: 553-556
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208329
- DOI: https://doi.org/10.1134/S1063785019060099
- ID: 208329
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详细
The disordering in cadmium mercury telluride solid solution films grown by molecular beam epitaxy on Si and GaAs substrates has been examined by optical transmission and photoluminescence investigations. The effect of a fundamental decrease in the disordering scale under thermal annealing and possible interplay of the observed phenomena with defects typical of films grown by molecular beam epitaxy are discussed.
作者简介
V. Ivanov-Omskii
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
K. Mynbaev
Ioffe Physical Technical Institute, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: mynkad@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Trapeznikova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Andryushchenko
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: mynkad@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
N. Bazhenov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
俄罗斯联邦, Novosibirsk, 630090
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
俄罗斯联邦, Novosibirsk, 630090
V. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
俄罗斯联邦, Novosibirsk, 630090
S. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
俄罗斯联邦, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: mynkad@mail.ioffe.ru
俄罗斯联邦, Novosibirsk, 630090