Enviar artigo por via de e-mail Study of transient processes in a p-i-n photodetector using the nonstationary physical-topological model
- Autores: Ryndin E.A.1, Pisarenko I.V.1
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Afiliações:
- Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering
- Edição: Volume 46, Nº 3 (2017)
- Páginas: 186-191
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186344
- DOI: https://doi.org/10.1134/S1063739717030064
- ID: 186344
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Resumo
We developed a nonstationary diffusion-drift physico-topological model of a GaAs p-i-n photodetector for operation as an element of an optical switch integrated circuit, together with a high-speed injection laser based on a double heterostructure with a functionally integrated radiation modulator.
Sobre autores
E. Ryndin
Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering
Autor responsável pela correspondência
Email: rynenator@gmail.com
Rússia, Taganrog, 347928
I. Pisarenko
Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering
Email: rynenator@gmail.com
Rússia, Taganrog, 347928
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