Study of transient processes in a p-i-n photodetector using the nonstationary physical-topological model
- Authors: Ryndin E.A.1, Pisarenko I.V.1
-
Affiliations:
- Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering
- Issue: Vol 46, No 3 (2017)
- Pages: 186-191
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186344
- DOI: https://doi.org/10.1134/S1063739717030064
- ID: 186344
Cite item
Abstract
We developed a nonstationary diffusion-drift physico-topological model of a GaAs p-i-n photodetector for operation as an element of an optical switch integrated circuit, together with a high-speed injection laser based on a double heterostructure with a functionally integrated radiation modulator.
About the authors
E. A. Ryndin
Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering
Author for correspondence.
Email: rynenator@gmail.com
Russian Federation, Taganrog, 347928
I. V. Pisarenko
Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering
Email: rynenator@gmail.com
Russian Federation, Taganrog, 347928