Study of transient processes in a p-i-n photodetector using the nonstationary physical-topological model
- Авторлар: Ryndin E.1, Pisarenko I.1
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Мекемелер:
- Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering
- Шығарылым: Том 46, № 3 (2017)
- Беттер: 186-191
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186344
- DOI: https://doi.org/10.1134/S1063739717030064
- ID: 186344
Дәйексөз келтіру
Аннотация
We developed a nonstationary diffusion-drift physico-topological model of a GaAs p-i-n photodetector for operation as an element of an optical switch integrated circuit, together with a high-speed injection laser based on a double heterostructure with a functionally integrated radiation modulator.
Авторлар туралы
E. Ryndin
Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering
Хат алмасуға жауапты Автор.
Email: rynenator@gmail.com
Ресей, Taganrog, 347928
I. Pisarenko
Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering
Email: rynenator@gmail.com
Ресей, Taganrog, 347928