Том 45, № 3 (2016)

The second part of the review is devoted to the theoretical description of diamond nanoelectromechanical devices interacting with nitrogen-vacancy centers in diamond in the coherent mode with a certain number of quanta. The experimental data are reported that reflect the features of the dynamic and spectral properties of such hybrid structures. The possibilities of the application of the hybrid structures in implementing one- and two-qubit operations, as well as in auxiliary procedures, including cooling, measuring, and generating nonclassical states, are discussed.

A polarization equation is derived for a thin-film electrode based on a silicon nanocomposite. The shallow thickness of the active layer (several micrometers) allows making some simplifying assumptions when deriving this equation and makes it possible to consider the case of weak polarization. For the polarization equation, a boundary problem is formulated, solutions are obtained, and system parameters for galvanostatic discharge are evaluated. It is shown that the parameters of the solutions meet the test conditions for experimental thin-film Si–O–Al samples and the condition of weak polarization.

Conducting the lift-off photolithography on silicon wafers with thicknesses of the FP-383 photoresist layers varying from 1.60 ± 0.20 to 4.20 ± 0.20 μm is considered. As a lift-off layer, either a silver layer or zinc selenide layer with a thickness of 80–90 nm was deposited. The edge roughness of the image elements after the lift-off is 5.00 ± 0.20 μm.

The phenomenon of terahertz radiation detection by resonant tunneling structures (RTSs) has been studied. The calculations of the changes ΔI₀ in the direct current (DC) component I₀ under the action of an alternating electric field were carried out by the solution of a nonstationary Schrodinger equation with a time-periodic electric field based on the Floquet mode expansion of the wave functions. The dependences of the DC component I₀ in resonant tunneling structures on the frequency ν and AC signal amplitude V_ac have been built. It is shown that the ΔI₀ value in triple-barrier RTSs at resonance frequency hv ≈ E_r2–E_r1 (E_r1 and E_r2 are the energies of the size-quantized levels) can exceed a low-frequency value by more than an order of magnitude. The parameters of the structures have been optmized, in order to use them in the terahertz radiation detectors in the anbsence of an external bias. The possibility of tuning the resonance frequency in the terahertz range by changing the DC bias has been shown.

With the ongoing progress in micro- and nanoelectronics, the technology of fabricating siliconon- insulator (SOI) structures is being increasingly applied in industrial processes. SOI structures have become a genuine breakthrough in micro- and nanoelectronics that have opened a real possibility of producing transistors and circuits with a channel length of up to ∼20 nm [9]. The high mobility of the charge carriers in the strained SiGe layers and the possibility of stimulating radiation in the terahertz frequency range of electromagnetic waves have secured an important place for SiGe/Si heterostructures in modern electronics and silicon optoelectronics [6]. The nc-Si/SiO₂ layer is regarded as a promising material for designing storage elements [10] and silicon-based light-emitting systems. In recent years, various MEMS devises and transducers of mechanical quantities (pressure sensors, microgyroscopes, and microaccelerometers) were designed based on SOI structures. The continuous improvement of the technological processes, which have been actively introduced in the field of navigation systems, aerospace engineering, and other high-tech industries, is of paramount importance for fabricating highly reliable quality products. Nonetheless, researchers and production engineers face the problem of reducing the level of mechanical stresses and other defects that can appear in the technological process when fabricating SOI structures.