Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge

Аннотация

The process of the formation of silicon–nitrogen nanostructures at a GaAs surface with orientation (100) and (110) by atomic layer deposition (molecular layering) is considered. The synthesis ios carried out in a vacuum unit using SiCl₄ and NH₃ vapors in the temperature range 423–723 K with activation of the process by a glow discharge at the ammonia pulsing stage. The conditions of the growth of silicon nitride nanostructures and the conditions of a layer mechanism of their formation are determined. It is established that, at temperatures of synthesis above 573 K, the increase in the silicon nitride layer’s thickness reaches ≈0.5 nm/cycle, which is likely to be explained by the participation of hydrazine in the process of film formation.