Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge
- Autores: Ezhovskii Y.K.1, Mikhailovskii S.V.1
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Afiliações:
- St. Petersburg State Institute of Technology (Technical University)
- Edição: Volume 48, Nº 4 (2019)
- Páginas: 229-235
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187142
- DOI: https://doi.org/10.1134/S1063739719030041
- ID: 187142
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Resumo
The process of the formation of silicon–nitrogen nanostructures at a GaAs surface with orientation (100) and (110) by atomic layer deposition (molecular layering) is considered. The synthesis ios carried out in a vacuum unit using SiCl4 and NH3 vapors in the temperature range 423–723 K with activation of the process by a glow discharge at the ammonia pulsing stage. The conditions of the growth of silicon nitride nanostructures and the conditions of a layer mechanism of their formation are determined. It is established that, at temperatures of synthesis above 573 K, the increase in the silicon nitride layer’s thickness reaches ≈0.5 nm/cycle, which is likely to be explained by the participation of hydrazine in the process of film formation.
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Sobre autores
Yu. Ezhovskii
St. Petersburg State Institute of Technology (Technical University)
Autor responsável pela correspondência
Email: ezhovski1@mail.ru
Rússia, St. Petersburg, 190013
S. Mikhailovskii
St. Petersburg State Institute of Technology (Technical University)
Email: ezhovski1@mail.ru
Rússia, St. Petersburg, 190013
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