Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge


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The process of the formation of silicon–nitrogen nanostructures at a GaAs surface with orientation (100) and (110) by atomic layer deposition (molecular layering) is considered. The synthesis ios carried out in a vacuum unit using SiCl4 and NH3 vapors in the temperature range 423–723 K with activation of the process by a glow discharge at the ammonia pulsing stage. The conditions of the growth of silicon nitride nanostructures and the conditions of a layer mechanism of their formation are determined. It is established that, at temperatures of synthesis above 573 K, the increase in the silicon nitride layer’s thickness reaches ≈0.5 nm/cycle, which is likely to be explained by the participation of hydrazine in the process of film formation.

Sobre autores

Yu. Ezhovskii

St. Petersburg State Institute of Technology (Technical University)

Autor responsável pela correspondência
Email: ezhovski1@mail.ru
Rússia, St. Petersburg, 190013

S. Mikhailovskii

St. Petersburg State Institute of Technology (Technical University)

Email: ezhovski1@mail.ru
Rússia, St. Petersburg, 190013

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