Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz
- Авторы: Mal’tsev P.1, Maitama M.1, Pavlov A.1, Shchavruk N.1
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Учреждения:
- Institute of Microwave Semiconductor Electronics
- Выпуск: Том 45, № 7 (2016)
- Страницы: 516-521
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185983
- DOI: https://doi.org/10.1134/S1063739716070118
- ID: 185983
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Аннотация
Discrete electrostatic microwave microelectromechanical switches on gallium arsenide wafers are designed and fabricated. The possibility of integrating the switches in one circuit with monolithic integrated circuits of transreceiving devices fabricated in one production cycle is estimated.
Об авторах
P. Mal’tsev
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Россия, Moscow, 117105
M. Maitama
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Россия, Moscow, 117105
A. Pavlov
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Россия, Moscow, 117105
N. Shchavruk
Institute of Microwave Semiconductor Electronics
Автор, ответственный за переписку.
Email: isvch@isvch.ru
Россия, Moscow, 117105