Enviar artigo por via de e-mail Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz
- Autores: Mal’tsev P.1, Maitama M.1, Pavlov A.1, Shchavruk N.1
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Afiliações:
- Institute of Microwave Semiconductor Electronics
- Edição: Volume 45, Nº 7 (2016)
- Páginas: 516-521
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185983
- DOI: https://doi.org/10.1134/S1063739716070118
- ID: 185983
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Resumo
Discrete electrostatic microwave microelectromechanical switches on gallium arsenide wafers are designed and fabricated. The possibility of integrating the switches in one circuit with monolithic integrated circuits of transreceiving devices fabricated in one production cycle is estimated.
Sobre autores
P. Mal’tsev
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Rússia, Moscow, 117105
M. Maitama
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Rússia, Moscow, 117105
A. Pavlov
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Rússia, Moscow, 117105
N. Shchavruk
Institute of Microwave Semiconductor Electronics
Autor responsável pela correspondência
Email: isvch@isvch.ru
Rússia, Moscow, 117105
