Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz
- Авторлар: Mal’tsev P.1, Maitama M.1, Pavlov A.1, Shchavruk N.1
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Мекемелер:
- Institute of Microwave Semiconductor Electronics
- Шығарылым: Том 45, № 7 (2016)
- Беттер: 516-521
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185983
- DOI: https://doi.org/10.1134/S1063739716070118
- ID: 185983
Дәйексөз келтіру
Аннотация
Discrete electrostatic microwave microelectromechanical switches on gallium arsenide wafers are designed and fabricated. The possibility of integrating the switches in one circuit with monolithic integrated circuits of transreceiving devices fabricated in one production cycle is estimated.
Авторлар туралы
P. Mal’tsev
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Ресей, Moscow, 117105
M. Maitama
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Ресей, Moscow, 117105
A. Pavlov
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Ресей, Moscow, 117105
N. Shchavruk
Institute of Microwave Semiconductor Electronics
Хат алмасуға жауапты Автор.
Email: isvch@isvch.ru
Ресей, Moscow, 117105