A nonlinear microwave model of a low-barrier diode based on semiconductor junctions
- Авторы: Arykov V.1, Yunusov I.1, Kagadei V.1, Fazleeva A.1
-
Учреждения:
- Micran Research and Production Company
- Выпуск: Том 45, № 3 (2016)
- Страницы: 196-204
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185634
- DOI: https://doi.org/10.1134/S1063739716020116
- ID: 185634
Цитировать
Аннотация
A refined nonlinear model of a low-barrier diode based on semiconductor junctions, which is constructed in a modified equivalent electric circuit, is proposed. The model takes into account the design features of diodes of this type, as compared with a well-known model, and can be recommended for use in designing frequency converting monolithic microwave integrated circuits (MMICs) in a frequency range of up to 110 GHz.
Ключевые слова
Об авторах
V. Arykov
Micran Research and Production Company
Email: yunusov@micran.ru
Россия, Tomsk, 634045
I. Yunusov
Micran Research and Production Company
Автор, ответственный за переписку.
Email: yunusov@micran.ru
Россия, Tomsk, 634045
V. Kagadei
Micran Research and Production Company
Email: yunusov@micran.ru
Россия, Tomsk, 634045
A. Fazleeva
Micran Research and Production Company
Email: yunusov@micran.ru
Россия, Tomsk, 634045