A nonlinear microwave model of a low-barrier diode based on semiconductor junctions

V. S. Arykov; I. V. Yunusov; V. A. Kagadei; A. Yu. Fazleeva

doi:10.1134/S1063739716020116

A nonlinear microwave model of a low-barrier diode based on semiconductor junctions

作者: Arykov V.S.¹, Yunusov I.V.¹, Kagadei V.A.¹, Fazleeva A.Y.¹
隶属关系:
1. Micran Research and Production Company
期: 卷 45, 编号 3 (2016)
页面: 196-204
栏目: Article
URL: https://journals.rcsi.science/1063-7397/article/view/185634
DOI: https://doi.org/10.1134/S1063739716020116
ID: 185634

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详细

A refined nonlinear model of a low-barrier diode based on semiconductor junctions, which is constructed in a modified equivalent electric circuit, is proposed. The model takes into account the design features of diodes of this type, as compared with a well-known model, and can be recommended for use in designing frequency converting monolithic microwave integrated circuits (MMICs) in a frequency range of up to 110 GHz.