Мақаланы E-mail арқылы жіберу Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors
- Авторлар: Ezhovskii Y.1
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Мекемелер:
- St. Petersburg State Institute of Technology (Technical University)
- Шығарылым: Том 48, № 2 (2019)
- Беттер: 80-84
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187095
- DOI: https://doi.org/10.1134/S1063739719020033
- ID: 187095
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Аннотация
The results of investigations of the synthesis of silicon and aluminum oxide nanolayers on the GaAs, InAs, and InSb binary semiconductor surface by molecular layering (atomic layer deposition) are generalized. The conditions for the layer-by-layer growth of the surface nanostructures are established and some of their dielectric characteristics are estimated.
Авторлар туралы
Yu. Ezhovskii
St. Petersburg State Institute of Technology (Technical University)
Хат алмасуға жауапты Автор.
Email: ezhovski1@mail.ru
Ресей, St. Petersburg, 190013
