Enviar artigo por via de e-mail Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors
- Autores: Ezhovskii Y.1
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Afiliações:
- St. Petersburg State Institute of Technology (Technical University)
- Edição: Volume 48, Nº 2 (2019)
- Páginas: 80-84
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187095
- DOI: https://doi.org/10.1134/S1063739719020033
- ID: 187095
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Resumo
The results of investigations of the synthesis of silicon and aluminum oxide nanolayers on the GaAs, InAs, and InSb binary semiconductor surface by molecular layering (atomic layer deposition) are generalized. The conditions for the layer-by-layer growth of the surface nanostructures are established and some of their dielectric characteristics are estimated.
Sobre autores
Yu. Ezhovskii
St. Petersburg State Institute of Technology (Technical University)
Autor responsável pela correspondência
Email: ezhovski1@mail.ru
Rússia, St. Petersburg, 190013
