Mode optimization of retrograde pocket doping in SOI-MOS VLSI transistors
- Авторлар: Amirkhanov A.1, Volkov S.1, Glushko A.2, Zinchenko L.2, Makarchuk V.2, Shakhnov V.2
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Мекемелер:
- Scientific Research Institute for System Studies
- Bauman Moscow State Technical University
- Шығарылым: Том 45, № 4 (2016)
- Беттер: 237-241
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185670
- DOI: https://doi.org/10.1134/S106373971604003X
- ID: 185670
Дәйексөз келтіру
Аннотация
A two-stage optimization technique for the parameters of SOI-MOS structures is proposed based on the correction of the pocket formation modes of an active structure. As a result of the use of this technique, the threshold voltage of the bottom (parasitic) transistor doubles, while maintaining the values of the parameters of the upper (main) transistor. The experimental investigations confirmed the effectiveness of using this optimization technique when doping the pockets of a SOI-MOS structure to provide the radiation hardness to the accumulated dose.
Авторлар туралы
A. Amirkhanov
Scientific Research Institute for System Studies
Хат алмасуға жауапты Автор.
Email: andrei19386@mail.ru
Ресей, Moscow
S. Volkov
Scientific Research Institute for System Studies
Email: andrei19386@mail.ru
Ресей, Moscow
A. Glushko
Bauman Moscow State Technical University
Email: andrei19386@mail.ru
Ресей, Moscow
L. Zinchenko
Bauman Moscow State Technical University
Email: andrei19386@mail.ru
Ресей, Moscow
V. Makarchuk
Bauman Moscow State Technical University
Email: andrei19386@mail.ru
Ресей, Moscow
V. Shakhnov
Bauman Moscow State Technical University
Email: andrei19386@mail.ru
Ресей, Moscow