Mode optimization of retrograde pocket doping in SOI-MOS VLSI transistors
- 作者: Amirkhanov A.1, Volkov S.1, Glushko A.2, Zinchenko L.2, Makarchuk V.2, Shakhnov V.2
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隶属关系:
- Scientific Research Institute for System Studies
- Bauman Moscow State Technical University
- 期: 卷 45, 编号 4 (2016)
- 页面: 237-241
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185670
- DOI: https://doi.org/10.1134/S106373971604003X
- ID: 185670
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详细
A two-stage optimization technique for the parameters of SOI-MOS structures is proposed based on the correction of the pocket formation modes of an active structure. As a result of the use of this technique, the threshold voltage of the bottom (parasitic) transistor doubles, while maintaining the values of the parameters of the upper (main) transistor. The experimental investigations confirmed the effectiveness of using this optimization technique when doping the pockets of a SOI-MOS structure to provide the radiation hardness to the accumulated dose.
作者简介
A. Amirkhanov
Scientific Research Institute for System Studies
编辑信件的主要联系方式.
Email: andrei19386@mail.ru
俄罗斯联邦, Moscow
S. Volkov
Scientific Research Institute for System Studies
Email: andrei19386@mail.ru
俄罗斯联邦, Moscow
A. Glushko
Bauman Moscow State Technical University
Email: andrei19386@mail.ru
俄罗斯联邦, Moscow
L. Zinchenko
Bauman Moscow State Technical University
Email: andrei19386@mail.ru
俄罗斯联邦, Moscow
V. Makarchuk
Bauman Moscow State Technical University
Email: andrei19386@mail.ru
俄罗斯联邦, Moscow
V. Shakhnov
Bauman Moscow State Technical University
Email: andrei19386@mail.ru
俄罗斯联邦, Moscow