Development of magnetic semiconductor microsystems technology
- Авторлар: Amelichev V.V.1,2, Abanin I.E.1, Aravin V.V.3, Kostyuk D.V.1,2, Kasatkin S.I.4, Reznev A.A.3, Saurov A.N.1,5
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Мекемелер:
- State Research and Development Center of Russian Federation “Technological Center” MIET
- National Research University of Electronic Technology MIET
- Troops Unit 68240
- Trapeznikov Institute of Control Sciences
- Institute of Nanotechnology of Microelectronics
- Шығарылым: Том 45, № 7 (2016)
- Беттер: 528-531
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186007
- DOI: https://doi.org/10.1134/S1063739716070015
- ID: 186007
Дәйексөз келтіру
Аннотация
The results of the development of technologies of magnetic semiconductor chips based on thinfilm magnetoresistive multilayer structures are presented. A brief overview of the main achievements in the field of magnetometric devices based on anisotropic and giant magnetoresistive effects is made.
Авторлар туралы
V. Amelichev
State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET
Хат алмасуға жауапты Автор.
Email: V.Amelichev@tcen.ru
Ресей, Moscow, 124498; Moscow, 124498
I. Abanin
State Research and Development Center of Russian Federation “Technological Center” MIET
Email: V.Amelichev@tcen.ru
Ресей, Moscow, 124498
V. Aravin
Troops Unit 68240
Email: V.Amelichev@tcen.ru
Ресей, Moscow
D. Kostyuk
State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET
Email: V.Amelichev@tcen.ru
Ресей, Moscow, 124498; Moscow, 124498
S. Kasatkin
Trapeznikov Institute of Control Sciences
Email: V.Amelichev@tcen.ru
Ресей, Moscow, 117997
A. Reznev
Troops Unit 68240
Email: V.Amelichev@tcen.ru
Ресей, Moscow
A. Saurov
State Research and Development Center of Russian Federation “Technological Center” MIET; Institute of Nanotechnology of Microelectronics
Email: V.Amelichev@tcen.ru
Ресей, Moscow, 124498; Moscow, 119991
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