Development of magnetic semiconductor microsystems technology


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Аннотация

The results of the development of technologies of magnetic semiconductor chips based on thinfilm magnetoresistive multilayer structures are presented. A brief overview of the main achievements in the field of magnetometric devices based on anisotropic and giant magnetoresistive effects is made.

Авторлар туралы

V. Amelichev

State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET

Хат алмасуға жауапты Автор.
Email: V.Amelichev@tcen.ru
Ресей, Moscow, 124498; Moscow, 124498

I. Abanin

State Research and Development Center of Russian Federation “Technological Center” MIET

Email: V.Amelichev@tcen.ru
Ресей, Moscow, 124498

V. Aravin

Troops Unit 68240

Email: V.Amelichev@tcen.ru
Ресей, Moscow

D. Kostyuk

State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET

Email: V.Amelichev@tcen.ru
Ресей, Moscow, 124498; Moscow, 124498

S. Kasatkin

Trapeznikov Institute of Control Sciences

Email: V.Amelichev@tcen.ru
Ресей, Moscow, 117997

A. Reznev

Troops Unit 68240

Email: V.Amelichev@tcen.ru
Ресей, Moscow

A. Saurov

State Research and Development Center of Russian Federation “Technological Center” MIET; Institute of Nanotechnology of Microelectronics

Email: V.Amelichev@tcen.ru
Ресей, Moscow, 124498; Moscow, 119991

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© Pleiades Publishing, Ltd., 2016