Development of magnetic semiconductor microsystems technology
- Авторы: Amelichev V.V.1,2, Abanin I.E.1, Aravin V.V.3, Kostyuk D.V.1,2, Kasatkin S.I.4, Reznev A.A.3, Saurov A.N.1,5
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Учреждения:
- State Research and Development Center of Russian Federation “Technological Center” MIET
- National Research University of Electronic Technology MIET
- Troops Unit 68240
- Trapeznikov Institute of Control Sciences
- Institute of Nanotechnology of Microelectronics
- Выпуск: Том 45, № 7 (2016)
- Страницы: 528-531
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186007
- DOI: https://doi.org/10.1134/S1063739716070015
- ID: 186007
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Аннотация
The results of the development of technologies of magnetic semiconductor chips based on thinfilm magnetoresistive multilayer structures are presented. A brief overview of the main achievements in the field of magnetometric devices based on anisotropic and giant magnetoresistive effects is made.
Об авторах
V. Amelichev
State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET
Автор, ответственный за переписку.
Email: V.Amelichev@tcen.ru
Россия, Moscow, 124498; Moscow, 124498
I. Abanin
State Research and Development Center of Russian Federation “Technological Center” MIET
Email: V.Amelichev@tcen.ru
Россия, Moscow, 124498
V. Aravin
Troops Unit 68240
Email: V.Amelichev@tcen.ru
Россия, Moscow
D. Kostyuk
State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET
Email: V.Amelichev@tcen.ru
Россия, Moscow, 124498; Moscow, 124498
S. Kasatkin
Trapeznikov Institute of Control Sciences
Email: V.Amelichev@tcen.ru
Россия, Moscow, 117997
A. Reznev
Troops Unit 68240
Email: V.Amelichev@tcen.ru
Россия, Moscow
A. Saurov
State Research and Development Center of Russian Federation “Technological Center” MIET; Institute of Nanotechnology of Microelectronics
Email: V.Amelichev@tcen.ru
Россия, Moscow, 124498; Moscow, 119991
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