Development of magnetic semiconductor microsystems technology


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The results of the development of technologies of magnetic semiconductor chips based on thinfilm magnetoresistive multilayer structures are presented. A brief overview of the main achievements in the field of magnetometric devices based on anisotropic and giant magnetoresistive effects is made.

作者简介

V. Amelichev

State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET

编辑信件的主要联系方式.
Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow, 124498; Moscow, 124498

I. Abanin

State Research and Development Center of Russian Federation “Technological Center” MIET

Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow, 124498

V. Aravin

Troops Unit 68240

Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow

D. Kostyuk

State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET

Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow, 124498; Moscow, 124498

S. Kasatkin

Trapeznikov Institute of Control Sciences

Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow, 117997

A. Reznev

Troops Unit 68240

Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow

A. Saurov

State Research and Development Center of Russian Federation “Technological Center” MIET; Institute of Nanotechnology of Microelectronics

Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow, 124498; Moscow, 119991

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