Development of magnetic semiconductor microsystems technology
- 作者: Amelichev V.V.1,2, Abanin I.E.1, Aravin V.V.3, Kostyuk D.V.1,2, Kasatkin S.I.4, Reznev A.A.3, Saurov A.N.1,5
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隶属关系:
- State Research and Development Center of Russian Federation “Technological Center” MIET
- National Research University of Electronic Technology MIET
- Troops Unit 68240
- Trapeznikov Institute of Control Sciences
- Institute of Nanotechnology of Microelectronics
- 期: 卷 45, 编号 7 (2016)
- 页面: 528-531
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186007
- DOI: https://doi.org/10.1134/S1063739716070015
- ID: 186007
如何引用文章
详细
The results of the development of technologies of magnetic semiconductor chips based on thinfilm magnetoresistive multilayer structures are presented. A brief overview of the main achievements in the field of magnetometric devices based on anisotropic and giant magnetoresistive effects is made.
作者简介
V. Amelichev
State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET
编辑信件的主要联系方式.
Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow, 124498; Moscow, 124498
I. Abanin
State Research and Development Center of Russian Federation “Technological Center” MIET
Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow, 124498
V. Aravin
Troops Unit 68240
Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow
D. Kostyuk
State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET
Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow, 124498; Moscow, 124498
S. Kasatkin
Trapeznikov Institute of Control Sciences
Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow, 117997
A. Reznev
Troops Unit 68240
Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow
A. Saurov
State Research and Development Center of Russian Federation “Technological Center” MIET; Institute of Nanotechnology of Microelectronics
Email: V.Amelichev@tcen.ru
俄罗斯联邦, Moscow, 124498; Moscow, 119991
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