Russian Microelectronics
ISSN 1063-7397 (Print)
ISSN 1608-3415 (Online)
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Keywords
ADC
DAC
GaAs
MIS varicap
RUSSIAN Microelectronics
atomic force microscopy
compaction in a magnetic field
ferroelectrics
gallium arsenide
gallium nitride
heterostructure
heterostructures
interface
leakage current
magnetic texture
phase shifter
porous silicon
recrystallization
silicon carbide
varicap
zirconia
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Keywords
ADC
DAC
GaAs
MIS varicap
RUSSIAN Microelectronics
atomic force microscopy
compaction in a magnetic field
ferroelectrics
gallium arsenide
gallium nitride
heterostructure
heterostructures
interface
leakage current
magnetic texture
phase shifter
porous silicon
recrystallization
silicon carbide
varicap
zirconia
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Author Details
Author Details
Shchavruk, N. V.
Issue
Section
Title
File
Vol 45, No 7 (2016)
Article
Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz
Vol 46, No 3 (2017)
Article
Partitioning very hard semiconductor sapphire wafers into monolithic integrated circuits using laser controlled thermal cleavage
Vol 46, No 5 (2017)
Article
Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits
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