Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects

M. E. Chernyak; E. V. Ranneva; A. V. Ulanova; A. Yu. Nikiforov; A. I. Verizhnikov; A. M. Tsyrlov; V. S. Fedosov; A. N. Shchepanov; V. D. Kalashnikov; D. O. Titovets

doi:10.1134/S1063739719060039

Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects

Авторлар: Chernyak M.E.¹, Ranneva E.V.², Ulanova A.V.¹^,2, Nikiforov A.Y.¹, Verizhnikov A.I.³, Tsyrlov A.M.³, Fedosov V.S.³, Shchepanov A.N.⁴, Kalashnikov V.D.¹, Titovets D.O.¹
Мекемелер:
1. National Research Nuclear University (MEPhI)
2. AO ENPO Specialized Electronic Systems
3. AO Proton
4. Mytishchi Scientific Research Institute of Radio Measuring Instruments
Шығарылым: Том 48, № 6 (2019)
Беттер: 415-421
Бөлім: Article
URL: https://journals.rcsi.science/1063-7397/article/view/187212
DOI: https://doi.org/10.1134/S1063739719060039
ID: 187212

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

This paper is devoted to analyzing the effect of gamma radiation on the behavior of optocouplers. According to a series of experiments that involve masking various parts of a chip from X-ray irradiation, the most sensitive region of the chip is determined and the design of the optocoupler is improved. Upon modification, the radiation hardness of the device more than triples.