Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects

M. E. Chernyak; E. V. Ranneva; A. V. Ulanova; A. Yu. Nikiforov; A. I. Verizhnikov; A. M. Tsyrlov; V. S. Fedosov; A. N. Shchepanov; V. D. Kalashnikov; D. O. Titovets

doi:10.1134/S1063739719060039

Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects

作者: Chernyak M.¹, Ranneva E.², Ulanova A.¹^,2, Nikiforov A.¹, Verizhnikov A.³, Tsyrlov A.³, Fedosov V.³, Shchepanov A.⁴, Kalashnikov V.¹, Titovets D.¹
隶属关系:
1. National Research Nuclear University (MEPhI)
2. AO ENPO Specialized Electronic Systems
3. AO Proton
4. Mytishchi Scientific Research Institute of Radio Measuring Instruments
期: 卷 48, 编号 6 (2019)
页面: 415-421
栏目: Article
URL: https://journals.rcsi.science/1063-7397/article/view/187212
DOI: https://doi.org/10.1134/S1063739719060039
ID: 187212

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This paper is devoted to analyzing the effect of gamma radiation on the behavior of optocouplers. According to a series of experiments that involve masking various parts of a chip from X-ray irradiation, the most sensitive region of the chip is determined and the design of the optocoupler is improved. Upon modification, the radiation hardness of the device more than triples.