Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language

Resumo

We describe a bipolar memristor in the Verilog-A language. The proposed model concepts take into account the following parameter deviations in the memristor switching between conduction states: the variation of the conduction parameters in the highly resistive and low-resistance state, the switching threshold variations, and the variation of the number of switching cycles.