Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language
- Авторлар: Teplov G.S.1, Gornev E.S.1
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Мекемелер:
- Molecular Electronics Research Institute (AO MERI)
- Шығарылым: Том 48, № 3 (2019)
- Беттер: 131-142
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187117
- DOI: https://doi.org/10.1134/S1063739719030107
- ID: 187117
Дәйексөз келтіру
Аннотация
We describe a bipolar memristor in the Verilog-A language. The proposed model concepts take into account the following parameter deviations in the memristor switching between conduction states: the variation of the conduction parameters in the highly resistive and low-resistance state, the switching threshold variations, and the variation of the number of switching cycles.
Авторлар туралы
G. Teplov
Molecular Electronics Research Institute (AO MERI)
Хат алмасуға жауапты Автор.
Email: gteplov@niime.ru
Ресей, Moscow, 124460
E. Gornev
Molecular Electronics Research Institute (AO MERI)
Хат алмасуға жауапты Автор.
Email: egornev@niime.ru
Ресей, Moscow, 124460
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