Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language
- 作者: Teplov G.1, Gornev E.1
-
隶属关系:
- Molecular Electronics Research Institute (AO MERI)
- 期: 卷 48, 编号 3 (2019)
- 页面: 131-142
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187117
- DOI: https://doi.org/10.1134/S1063739719030107
- ID: 187117
如何引用文章
详细
We describe a bipolar memristor in the Verilog-A language. The proposed model concepts take into account the following parameter deviations in the memristor switching between conduction states: the variation of the conduction parameters in the highly resistive and low-resistance state, the switching threshold variations, and the variation of the number of switching cycles.
作者简介
G. Teplov
Molecular Electronics Research Institute (AO MERI)
编辑信件的主要联系方式.
Email: gteplov@niime.ru
俄罗斯联邦, Moscow, 124460
E. Gornev
Molecular Electronics Research Institute (AO MERI)
编辑信件的主要联系方式.
Email: egornev@niime.ru
俄罗斯联邦, Moscow, 124460