Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching

详细

The masking properties are studied for polymeric structures based on a triacrylamide derivative of polyfluorochalcone at wet etching in aqueous acidic (H₂SO₄, H₃PO₄) and alkaline (NaOH) environments, as well as at reactive ion etching (CF₄). The kinetic curves are obtained and the etching rates inherent in the photoresists are estimated. A comparison with commercially available photoresists AZ4562 and SU-8 is performed.