Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

The masking properties are studied for polymeric structures based on a triacrylamide derivative of polyfluorochalcone at wet etching in aqueous acidic (H2SO4, H3PO4) and alkaline (NaOH) environments, as well as at reactive ion etching (CF4). The kinetic curves are obtained and the etching rates inherent in the photoresists are estimated. A comparison with commercially available photoresists AZ4562 and SU-8 is performed.

Sobre autores

S. Derevyashkin

Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences,
; Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences

Autor responsável pela correspondência
Email: Lilpick69@mail.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090

E. Soboleva

Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences,

Email: Lilpick69@mail.ru
Rússia, Novosibirsk, 630090

V. Shelkovnikov

Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences,
; Novosibirsk State Technical University

Email: Lilpick69@mail.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630073

A. Malyshev

Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences

Email: Lilpick69@mail.ru
Rússia, Novosibirsk, 630090

V. Korolkov

Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences

Email: Lilpick69@mail.ru
Rússia, Novosibirsk, 630090


Declaração de direitos autorais © Pleiades Publishing, Ltd., 2019

Este site utiliza cookies

Ao continuar usando nosso site, você concorda com o procedimento de cookies que mantêm o site funcionando normalmente.

Informação sobre cookies