Device-Technological Modeling of Integrated Circuit Elements with Improved Resilience to External Influences
- Авторлар: Chaplygin Y.1, Krupkina T.1, Krasukov A.1, Artamonova E.1
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Мекемелер:
- National Research University of Electronic Technology
- Шығарылым: Том 46, № 7 (2017)
- Беттер: 474-477
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186639
- DOI: https://doi.org/10.1134/S1063739717070046
- ID: 186639
Дәйексөз келтіру
Аннотация
This paper analyzes some features of the process and device simulation tools. The tools are analyzed as applied to the calculation of electrical characteristics for several integrated circuit (IC) devices operating under different external conditions. The model features having the maximum effect on the simulation results are identified.
Авторлар туралы
Y. Chaplygin
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
Ресей, Moscow
T. Krupkina
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
Ресей, Moscow
A. Krasukov
National Research University of Electronic Technology
Хат алмасуға жауапты Автор.
Email: a_kras@org.miet.ru
Ресей, Moscow
E. Artamonova
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
Ресей, Moscow