Device-Technological Modeling of Integrated Circuit Elements with Improved Resilience to External Influences
- Авторы: Chaplygin Y.1, Krupkina T.1, Krasukov A.1, Artamonova E.1
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Учреждения:
- National Research University of Electronic Technology
- Выпуск: Том 46, № 7 (2017)
- Страницы: 474-477
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186639
- DOI: https://doi.org/10.1134/S1063739717070046
- ID: 186639
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Аннотация
This paper analyzes some features of the process and device simulation tools. The tools are analyzed as applied to the calculation of electrical characteristics for several integrated circuit (IC) devices operating under different external conditions. The model features having the maximum effect on the simulation results are identified.
Об авторах
Y. Chaplygin
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
Россия, Moscow
T. Krupkina
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
Россия, Moscow
A. Krasukov
National Research University of Electronic Technology
Автор, ответственный за переписку.
Email: a_kras@org.miet.ru
Россия, Moscow
E. Artamonova
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
Россия, Moscow