Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips

V. M. Roshchin; I. N. Petukhov; K. S. Sen’chenko; A. V. Roshchina; T. V. Shilina

doi:10.1134/S1063739717070095

Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips

作者: Roshchin V.¹, Petukhov I.¹, Sen’chenko K.¹, Roshchina A.¹, Shilina T.¹
隶属关系:
1. National Research University of Electronic Technology (MIET)
期: 卷 46, 编号 7 (2017)
页面: 454-457
栏目: Article
URL: https://journals.rcsi.science/1063-7397/article/view/186614
DOI: https://doi.org/10.1134/S1063739717070095
ID: 186614

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
统计

详细

The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit between the contact areas with the solder material has been shown.