Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips

V. M. Roshchin; I. N. Petukhov; K. S. Sen’chenko; A. V. Roshchina; T. V. Shilina

doi:10.1134/S1063739717070095

Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips

Авторы: Roshchin V.¹, Petukhov I.¹, Sen’chenko K.¹, Roshchina A.¹, Shilina T.¹
Учреждения:
1. National Research University of Electronic Technology (MIET)
Выпуск: Том 46, № 7 (2017)
Страницы: 454-457
Раздел: Article
URL: https://journals.rcsi.science/1063-7397/article/view/186614
DOI: https://doi.org/10.1134/S1063739717070095
ID: 186614

Цитировать

Полный текст

Открытый доступ
Доступ закрыт

Доступ предоставлен
Доступ закрыт

Только для подписчиков

Аннотация
Об авторах
Список литературы
Статистика

Аннотация

The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit between the contact areas with the solder material has been shown.