Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors


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The research results of the resistance of signal converters with the operating frequency of 57–64 GHz, manufactured at the Institute of Ultrahigh Frequency Semiconductor Electronics on AlGaN/GaN/Al2O3 heterostructures to the action of special factors such as neutron and gamma radiation are presented. The results of evaluation of the long-term stability of the signal converters at high temperature are also discussed. The possible physical mechanisms of the changing characteristics are considered.

Sobre autores

K. Kagirina

Institute of Ultrahigh Frequency Semiconductor Electronics

Autor responsável pela correspondência
Email: kagirina@gmail.com
Rússia, Moscow, 117105

Yu. Fedorov

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Rússia, Moscow, 117105

D. Lavrukhin

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Rússia, Moscow, 117105

S. Gamkrelidze

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Rússia, Moscow, 117105

D. Gnatyuk

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Rússia, Moscow, 117105

A. Zuev

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Rússia, Moscow, 117105

O. Ruban

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Rússia, Moscow, 117105

D. Gromov

National Research Nuclear University “MEPhI,”

Email: kagirina@gmail.com
Rússia, Moscow, 115409

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