Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors


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The research results of the resistance of signal converters with the operating frequency of 57–64 GHz, manufactured at the Institute of Ultrahigh Frequency Semiconductor Electronics on AlGaN/GaN/Al2O3 heterostructures to the action of special factors such as neutron and gamma radiation are presented. The results of evaluation of the long-term stability of the signal converters at high temperature are also discussed. The possible physical mechanisms of the changing characteristics are considered.

作者简介

K. Kagirina

Institute of Ultrahigh Frequency Semiconductor Electronics

编辑信件的主要联系方式.
Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105

Yu. Fedorov

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105

D. Lavrukhin

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105

S. Gamkrelidze

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105

D. Gnatyuk

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105

A. Zuev

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105

O. Ruban

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105

D. Gromov

National Research Nuclear University “MEPhI,”

Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 115409

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