Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors
- 作者: Kagirina K.A.1, Fedorov Y.V.1, Lavrukhin D.V.1, Gamkrelidze S.A.1, Gnatyuk D.L.1, Zuev A.V.1, Ruban O.A.1, Gromov D.V.2
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隶属关系:
- Institute of Ultrahigh Frequency Semiconductor Electronics
- National Research Nuclear University “MEPhI,”
- 期: 卷 46, 编号 3 (2017)
- 页面: 149-154
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186308
- DOI: https://doi.org/10.1134/S1063739717030039
- ID: 186308
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详细
The research results of the resistance of signal converters with the operating frequency of 57–64 GHz, manufactured at the Institute of Ultrahigh Frequency Semiconductor Electronics on AlGaN/GaN/Al2O3 heterostructures to the action of special factors such as neutron and gamma radiation are presented. The results of evaluation of the long-term stability of the signal converters at high temperature are also discussed. The possible physical mechanisms of the changing characteristics are considered.
作者简介
K. Kagirina
Institute of Ultrahigh Frequency Semiconductor Electronics
编辑信件的主要联系方式.
Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105
Yu. Fedorov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105
D. Lavrukhin
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105
S. Gamkrelidze
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105
D. Gnatyuk
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105
A. Zuev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105
O. Ruban
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 117105
D. Gromov
National Research Nuclear University “MEPhI,”
Email: kagirina@gmail.com
俄罗斯联邦, Moscow, 115409
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