Formation of silver and zinc selenide relief patterns by the lift-off photolithography method

Аннотация

Conducting the lift-off photolithography on silicon wafers with thicknesses of the FP-383 photoresist layers varying from 1.60 ± 0.20 to 4.20 ± 0.20 μm is considered. As a lift-off layer, either a silver layer or zinc selenide layer with a thickness of 80–90 nm was deposited. The edge roughness of the image elements after the lift-off is 5.00 ± 0.20 μm.