Formation of silver and zinc selenide relief patterns by the lift-off photolithography method
- Autores: Lysich D.1,2, Zelentsov S.1, Kotomina V.3, Antonov I.3
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Afiliações:
- Chemical Faculty
- Alekseev Nizhny Novgorod State Technical University
- Nizhny Novgorod Physical-Technical Institute
- Edição: Volume 45, Nº 3 (2016)
- Páginas: 191-195
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185626
- DOI: https://doi.org/10.1134/S1063739716030069
- ID: 185626
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Resumo
Conducting the lift-off photolithography on silicon wafers with thicknesses of the FP-383 photoresist layers varying from 1.60 ± 0.20 to 4.20 ± 0.20 μm is considered. As a lift-off layer, either a silver layer or zinc selenide layer with a thickness of 80–90 nm was deposited. The edge roughness of the image elements after the lift-off is 5.00 ± 0.20 μm.
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Sobre autores
D. Lysich
Chemical Faculty; Alekseev Nizhny Novgorod State Technical University
Autor responsável pela correspondência
Email: ldv892551@mail.ru
Rússia, Nizhny Novgorod; Nizhny Novgorod
S. Zelentsov
Chemical Faculty
Email: ldv892551@mail.ru
Rússia, Nizhny Novgorod
V. Kotomina
Nizhny Novgorod Physical-Technical Institute
Email: ldv892551@mail.ru
Rússia, Nizhny Novgorod
I. Antonov
Nizhny Novgorod Physical-Technical Institute
Email: ldv892551@mail.ru
Rússia, Nizhny Novgorod