电邮这篇文章 Structural Evolution of Nanoscale Ferroelectric Hf₀.₅Zr₀.₅O₂ Layers as a Result of Their Cyclic Electrical Stimulation
- 作者: Lev L.L.1, Konashuk A.S.2, Khakimov R.R.1, Chernikova A.G.1, Markeev A.M.1, Lebedev A.M.3, Nazin V.G.3, Chumakov R.G.3, Zenkevich A.V.1
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隶属关系:
- Moscow Institute of Physics and Technology
- St. Petersburg State University
- Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
- 期: 编号 4 (2025)
- 页面: 3–10
- 栏目: Articles
- URL: https://journals.rcsi.science/1028-0960/article/view/326363
- DOI: https://doi.org/10.31857/S1028096025040011
- EDN: https://elibrary.ru/FBOYZB
- ID: 326363
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详细
Despite the large number of already published articles on the topic of ferroelectric properties of Hf₀.₅Zr₀.₅O₂ (HZO), this material still attracts enormous attention from the scientific community due to its potential for creating competitive non-volatile HZO-based memory devices compatible with modern silicon technology. Among the challenges in developing industrial-scale technology for such devices is the instability of the residual polarization of the ferroelectric during repeated switching by an external electric field. In particular, during the initial stages of such “cycling,” a significant increase in residual polarization is typically observed (the so-called “wake-up” effect), followed—after a certain number of cycles—by its decline (the so-called “fatigue” effect). The question of which processes cause this instability remains under debate. Using a previously developed methodology for analyzing the phase composition of ultrathin HZO layers via the NEXAFS synchrotron radiation method, it has been shown that in capacitors based on TiN/HZO/TiN structures, the “wake-up” effect observed during the first 10⁵ switching cycles can be explained by an increase in the relative content of the polar orthorhombic phase in HZO due to a reduction in the content of the “parasitic” tetragonal phase. The results obtained confirm that an electric field-stimulated structural phase transition in the films is one of the mechanisms explaining the evolution of the functional properties of HZO-based ferroelectric memory elements throughout their service life.
作者简介
L. Lev
Moscow Institute of Physics and Technology
Email: lev.ll@mipt.ru
俄罗斯联邦, Dolgoprudny, Moscow oblast, 141701
A. Konashuk
St. Petersburg State University
Email: lev.ll@mipt.ru
St. Petersburg, 199034
R. Khakimov
Moscow Institute of Physics and Technology
Email: lev.ll@mipt.ru
俄罗斯联邦, Dolgoprudny, Moscow oblast, 141701
A. Chernikova
Moscow Institute of Physics and Technology
Email: lev.ll@mipt.ru
俄罗斯联邦, Dolgoprudny, Moscow oblast, 141701
A. Markeev
Moscow Institute of Physics and Technology
Email: lev.ll@mipt.ru
俄罗斯联邦, Dolgoprudny, Moscow oblast, 141701
A. Lebedev
Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
Email: lev.ll@mipt.ru
俄罗斯联邦, Moscow, 123182
V. Nazin
Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
Email: lev.ll@mipt.ru
俄罗斯联邦, Moscow, 123182
R. Chumakov
Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
Email: lev.ll@mipt.ru
俄罗斯联邦, Moscow, 123182
A. Zenkevich
Moscow Institute of Physics and Technology
编辑信件的主要联系方式.
Email: lev.ll@mipt.ru
俄罗斯联邦, Dolgoprudny, Moscow oblast, 141701
参考
- Robertson J. // Rep. Progress Phys. 2005. V. 69. P. 327.
- Kim S. K., Lee S. W., Han J. H., Lee B., Han S., Hwang C. S. // Adv. Funct. Mater. 2010. V 20. P. 2989.
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