Enviar artigo por via de e-mail Structural Evolution of Nanoscale Ferroelectric Hf₀.₅Zr₀.₅O₂ Layers as a Result of Their Cyclic Electrical Stimulation
- Autores: Lev L.L.1, Konashuk A.S.2, Khakimov R.R.1, Chernikova A.G.1, Markeev A.M.1, Lebedev A.M.3, Nazin V.G.3, Chumakov R.G.3, Zenkevich A.V.1
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Afiliações:
- Moscow Institute of Physics and Technology
- St. Petersburg State University
- Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
- Edição: Nº 4 (2025)
- Páginas: 3–10
- Seção: Articles
- URL: https://journals.rcsi.science/1028-0960/article/view/326363
- DOI: https://doi.org/10.31857/S1028096025040011
- EDN: https://elibrary.ru/FBOYZB
- ID: 326363
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Resumo
Despite the large number of already published articles on the topic of ferroelectric properties of Hf₀.₅Zr₀.₅O₂ (HZO), this material still attracts enormous attention from the scientific community due to its potential for creating competitive non-volatile HZO-based memory devices compatible with modern silicon technology. Among the challenges in developing industrial-scale technology for such devices is the instability of the residual polarization of the ferroelectric during repeated switching by an external electric field. In particular, during the initial stages of such “cycling,” a significant increase in residual polarization is typically observed (the so-called “wake-up” effect), followed—after a certain number of cycles—by its decline (the so-called “fatigue” effect). The question of which processes cause this instability remains under debate. Using a previously developed methodology for analyzing the phase composition of ultrathin HZO layers via the NEXAFS synchrotron radiation method, it has been shown that in capacitors based on TiN/HZO/TiN structures, the “wake-up” effect observed during the first 10⁵ switching cycles can be explained by an increase in the relative content of the polar orthorhombic phase in HZO due to a reduction in the content of the “parasitic” tetragonal phase. The results obtained confirm that an electric field-stimulated structural phase transition in the films is one of the mechanisms explaining the evolution of the functional properties of HZO-based ferroelectric memory elements throughout their service life.
Sobre autores
L. Lev
Moscow Institute of Physics and Technology
Email: lev.ll@mipt.ru
Rússia, Dolgoprudny, Moscow oblast, 141701
A. Konashuk
St. Petersburg State University
Email: lev.ll@mipt.ru
St. Petersburg, 199034
R. Khakimov
Moscow Institute of Physics and Technology
Email: lev.ll@mipt.ru
Rússia, Dolgoprudny, Moscow oblast, 141701
A. Chernikova
Moscow Institute of Physics and Technology
Email: lev.ll@mipt.ru
Rússia, Dolgoprudny, Moscow oblast, 141701
A. Markeev
Moscow Institute of Physics and Technology
Email: lev.ll@mipt.ru
Rússia, Dolgoprudny, Moscow oblast, 141701
A. Lebedev
Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
Email: lev.ll@mipt.ru
Rússia, Moscow, 123182
V. Nazin
Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
Email: lev.ll@mipt.ru
Rússia, Moscow, 123182
R. Chumakov
Kurchatov Complex for Synchrotron and Neutron Investigations, National Research Center “Kurchatov Institute”
Email: lev.ll@mipt.ru
Rússia, Moscow, 123182
A. Zenkevich
Moscow Institute of Physics and Technology
Autor responsável pela correspondência
Email: lev.ll@mipt.ru
Rússia, Dolgoprudny, Moscow oblast, 141701
Bibliografia
- Robertson J. // Rep. Progress Phys. 2005. V. 69. P. 327.
- Kim S. K., Lee S. W., Han J. H., Lee B., Han S., Hwang C. S. // Adv. Funct. Mater. 2010. V 20. P. 2989.
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