Email this article Formation of Films of Tungsten and its Oxides in a High-Frequency Capacitive Discharge in a D2-O2 Mixture
- Authors: Gorodetsky A.E.1, Zalavutdinov R.K.1, Bukhovets V.L.1, Markin A.V.1, Zakharov A.P.1, Zolotarevsky V.I.1, Voytitsky V.L.1, Rybkina T.V.1, Kazansky L.P.1, Arkhipushkin I.A.1, Mukhin E.E.2, Razdobarin A.G.2
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Affiliations:
- Frumkin Institute of Physical Chemistry and Electrochemistry
- Ioffe Physical-Technical Institute
- Issue: Vol 11, No 6 (2017)
- Pages: 1196-1207
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/194469
- DOI: https://doi.org/10.1134/S1027451017060283
- ID: 194469
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Abstract
A technique for tungsten-film deposition on different substrates in asymmetrical high-frequency (1.76 MHz) capacitive discharge in a D2−6.5 mol % O2 mixture under a total pressure of 15 Pa and at 60–130°C is considered. A circular W strip near the upper inner edge of a cylindrical hollow cathode with a radius of 4.2 cm and a height of 10 cm is the source of W particles. The smooth transition from sputtering of the inner surface to deposition occurs at a distance of about 4 cm from the upper boundary of the open part of the cathode. W, Mo, ZrO2, Si, and Cu substrates are placed in the lower closed end (bottom) and on the inner lateral cathode surface. At the upper cathode edge the sputtering yield is (4–5) × 10−2 at/ion. The mass rate of W deposition on the cathode bottom does not depend on the substrate type and is 40 μg/(cm2 h). The peculiarities of the composition, morphology, and structure of W films obtained on the lateral surface and bottom of the hollow cathode are discussed.
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About the authors
A. E. Gorodetsky
Frumkin Institute of Physical Chemistry and Electrochemistry
Author for correspondence.
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119071
R. Kh. Zalavutdinov
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119071
V. L. Bukhovets
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119071
A. V. Markin
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119071
A. P. Zakharov
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119071
V. I. Zolotarevsky
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119071
V. L. Voytitsky
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119071
T. V. Rybkina
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119071
L. P. Kazansky
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119071
I. A. Arkhipushkin
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119071
E. E. Mukhin
Ioffe Physical-Technical Institute
Email: aegorodetsky@mail.ru
Russian Federation, St. Petersburg, 194021
A. G. Razdobarin
Ioffe Physical-Technical Institute
Email: aegorodetsky@mail.ru
Russian Federation, St. Petersburg, 194021
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