Мақаланы E-mail арқылы жіберу Formation of Films of Tungsten and its Oxides in a High-Frequency Capacitive Discharge in a D2-O2 Mixture
- Авторлар: Gorodetsky A.E.1, Zalavutdinov R.K.1, Bukhovets V.L.1, Markin A.V.1, Zakharov A.P.1, Zolotarevsky V.I.1, Voytitsky V.L.1, Rybkina T.V.1, Kazansky L.P.1, Arkhipushkin I.A.1, Mukhin E.E.2, Razdobarin A.G.2
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Мекемелер:
- Frumkin Institute of Physical Chemistry and Electrochemistry
- Ioffe Physical-Technical Institute
- Шығарылым: Том 11, № 6 (2017)
- Беттер: 1196-1207
- Бөлім: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/194469
- DOI: https://doi.org/10.1134/S1027451017060283
- ID: 194469
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
A technique for tungsten-film deposition on different substrates in asymmetrical high-frequency (1.76 MHz) capacitive discharge in a D2−6.5 mol % O2 mixture under a total pressure of 15 Pa and at 60–130°C is considered. A circular W strip near the upper inner edge of a cylindrical hollow cathode with a radius of 4.2 cm and a height of 10 cm is the source of W particles. The smooth transition from sputtering of the inner surface to deposition occurs at a distance of about 4 cm from the upper boundary of the open part of the cathode. W, Mo, ZrO2, Si, and Cu substrates are placed in the lower closed end (bottom) and on the inner lateral cathode surface. At the upper cathode edge the sputtering yield is (4–5) × 10−2 at/ion. The mass rate of W deposition on the cathode bottom does not depend on the substrate type and is 40 μg/(cm2 h). The peculiarities of the composition, morphology, and structure of W films obtained on the lateral surface and bottom of the hollow cathode are discussed.
Негізгі сөздер
Авторлар туралы
A. Gorodetsky
Frumkin Institute of Physical Chemistry and Electrochemistry
Хат алмасуға жауапты Автор.
Email: aegorodetsky@mail.ru
Ресей, Moscow, 119071
R. Zalavutdinov
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Ресей, Moscow, 119071
V. Bukhovets
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Ресей, Moscow, 119071
A. Markin
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Ресей, Moscow, 119071
A. Zakharov
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Ресей, Moscow, 119071
V. Zolotarevsky
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Ресей, Moscow, 119071
V. Voytitsky
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Ресей, Moscow, 119071
T. Rybkina
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Ресей, Moscow, 119071
L. Kazansky
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Ресей, Moscow, 119071
I. Arkhipushkin
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Ресей, Moscow, 119071
E. Mukhin
Ioffe Physical-Technical Institute
Email: aegorodetsky@mail.ru
Ресей, St. Petersburg, 194021
A. Razdobarin
Ioffe Physical-Technical Institute
Email: aegorodetsky@mail.ru
Ресей, St. Petersburg, 194021
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