Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films
- Авторлар: Umirzakov B.E.1, Tashmukhamedova D.A.1, Rabbimov E.M.2, Sodikjanov J.S.1, Urokov A.N.1
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Мекемелер:
- Tashkent State Technical University Named after Islam Karimov
- Jizzakh Polytechnical Institute
- Шығарылым: Том 13, № 6 (2019)
- Беттер: 1248-1251
- Бөлім: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196567
- DOI: https://doi.org/10.1134/S1027451019060557
- ID: 196567
Дәйексөз келтіру
Аннотация
Cd nanofilms with a thickness of 10–12 Å are obtained by bombarding a CdS surface with Ar+ ions. The obtained Cd–CdS nanofilm systems are shown to be promising for creating metal–insulator–semiconductor and semiconductor–insulator–semiconductor heterostructures and forming nanoscale barrier layers and hyperfine ohmic contacts on the semiconductor surface.
Негізгі сөздер
Авторлар туралы
B. Umirzakov
Tashkent State Technical University Named after Islam Karimov
Хат алмасуға жауапты Автор.
Email: ftmet@rambler.ru
Өзбекстан, Tashkent, 100095
D. Tashmukhamedova
Tashkent State Technical University Named after Islam Karimov
Хат алмасуға жауапты Автор.
Email: ftmet@mail.ru
Өзбекстан, Tashkent, 100095
E. Rabbimov
Jizzakh Polytechnical Institute
Email: ftmet@mail.ru
Өзбекстан, Jizzakh, 130100
J. Sodikjanov
Tashkent State Technical University Named after Islam Karimov
Email: ftmet@mail.ru
Өзбекстан, Tashkent, 100095
A. Urokov
Tashkent State Technical University Named after Islam Karimov
Email: ftmet@mail.ru
Өзбекстан, Tashkent, 100095
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