Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films
- Авторы: Umirzakov B.E.1, Tashmukhamedova D.A.1, Rabbimov E.M.2, Sodikjanov J.S.1, Urokov A.N.1
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Учреждения:
- Tashkent State Technical University Named after Islam Karimov
- Jizzakh Polytechnical Institute
- Выпуск: Том 13, № 6 (2019)
- Страницы: 1248-1251
- Раздел: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196567
- DOI: https://doi.org/10.1134/S1027451019060557
- ID: 196567
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Аннотация
Cd nanofilms with a thickness of 10–12 Å are obtained by bombarding a CdS surface with Ar+ ions. The obtained Cd–CdS nanofilm systems are shown to be promising for creating metal–insulator–semiconductor and semiconductor–insulator–semiconductor heterostructures and forming nanoscale barrier layers and hyperfine ohmic contacts on the semiconductor surface.
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Об авторах
B. Umirzakov
Tashkent State Technical University Named after Islam Karimov
Автор, ответственный за переписку.
Email: ftmet@rambler.ru
Узбекистан, Tashkent, 100095
D. Tashmukhamedova
Tashkent State Technical University Named after Islam Karimov
Автор, ответственный за переписку.
Email: ftmet@mail.ru
Узбекистан, Tashkent, 100095
E. Rabbimov
Jizzakh Polytechnical Institute
Email: ftmet@mail.ru
Узбекистан, Jizzakh, 130100
J. Sodikjanov
Tashkent State Technical University Named after Islam Karimov
Email: ftmet@mail.ru
Узбекистан, Tashkent, 100095
A. Urokov
Tashkent State Technical University Named after Islam Karimov
Email: ftmet@mail.ru
Узбекистан, Tashkent, 100095
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